SIHU6N65E-GE3

new-10%

Manufacturer part number:SIHU6N65E-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK

Case Package:SOT-23

Datasheet:SIHU6N65E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	78W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	4V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	56 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free