SIHW47N65E-GE3

new-10%

Manufacturer part number:SIHW47N65E-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247AD

Case Package:SOT-23

Datasheet:SIHW47N65E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	417W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	417W
Turn On Delay Time	47 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5682pF @ 100V
Current - Continuous Drain (Id) @ 25°C	47A Tc
Gate Charge (Qg) (Max) @ Vgs	273nC @ 10V
Rise Time	87ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	103 ns
Turn-Off Delay Time	156 ns
Continuous Drain Current (ID)	47A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.072Ohm
DS Breakdown Voltage-Min	650V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant