SIJ400DP-T1-GE3

new-10%

Manufacturer part number:SIJ400DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET, N CH, 30V, 32A, PPAK SO8L

Case Package:SOT-23

Datasheet:SIJ400DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PSSO-G5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	5W Ta 69.4W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	69.4W
Case Connection	DRAIN
Turn On Delay Time	48 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7765pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	66ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	26.3A
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	30V
Nominal Vgs	2.5 V
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant