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SIR690DP-T1-RE3

SIR690DP-T1-RE3

SIR690DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 200V 34.4A SO-8

SOT-23

SIR690DP-T1-RE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 104W Tc
Power Dissipation 6.25W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1935pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34.4A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 8.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 28.5mOhm
Height 1.17mm
RoHS Status RoHS Compliant
Pricing & Ordering
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