SIR826DP-T1-RE3

new-10%

Manufacturer part number:SIR826DP-T1-RE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 80V 60A POWERPAKSO-8

Case Package:SOT-23

Datasheet:SIR826DP-T1-RE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	104W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 40V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V