IRF7854PBF

new-10%

IRF7854PBF

Manufacturer part number:IRF7854PBF

Manufacturer:Infineon Technologies

Description:IRF7854PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7854PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	13.4MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Max Output Current	2.5A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
Turn On Delay Time	9.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	8.5ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8.6 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	4.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	80V
Dual Supply Voltage	80V
Input Capacitance	1.62nF
Recovery Time	65 ns
Drain to Source Resistance	13.4mOhm
Rds On Max	13.4 mΩ
Nominal Vgs	4.9 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free