SIR882DP-T1-GE3

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Manufacturer part number:SIR882DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 60A PPAK SO-8

Case Package:SOT-23

Datasheet:SIR882DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-XDSO-C5
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.4W Ta 83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.4W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1930pF @ 50V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	60A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	45 mJ
Nominal Vgs	1.2 V
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free