SIS407DN-T1-GE3

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SIS407DN-T1-GE3

Manufacturer part number:SIS407DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 25A 1212-8 PPAK

Case Package:SOT-23

Datasheet:SIS407DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	9.5mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.6W Ta 33W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 15.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2760pF @ 10V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	93.8nC @ 8V
Rise Time	28ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	92 ns
Continuous Drain Current (ID)	-25A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	20 mJ
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free