SIS778DN-T1-GE3

new-10%

Manufacturer part number:SIS778DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 35A POWERPAK1212

Case Package:SOT-23

Datasheet:SIS778DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	52W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1390pF @ 15V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	42.5nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.005Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	20 mJ
FET Feature	Schottky Diode (Body)
RoHS Status	RoHS Compliant