FQPF2N80YDTU

new-10%

Manufacturer part number:FQPF2N80YDTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V TO-220-3

Case Package:SOT-23

Datasheet:FQPF2N80YDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 21 hours ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Number of Pins	3
Weight	2.565g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	35W Tc
Element Configuration	Single
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.5A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Height	16.07mm
Length	10.36mm
Width	4.9mm
RoHS Status	ROHS3 Compliant