IPP076N12N3GXKSA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 230 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6640pF @ 60V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 120V.Its overall power consumption can be reduced by using drive voltage (10V).

IPP076N12N3GXKSA1 Features

the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 39 ns
based on its rated peak drain current 400A.

IPP076N12N3GXKSA1 Applications

There are a lot of Infineon Technologies
IPP076N12N3GXKSA1 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit