STL7DN6LF3

new-10%

Manufacturer part number:STL7DN6LF3

Manufacturer:STMicroelectronics

Description:STL7DN6LF3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STL7DN6LF3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, STripFET™ III
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Max Power Dissipation	52W
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Base Part Number	STL7D
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
Case Connection	DRAIN
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	43m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	432pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 10V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	26A
Avalanche Energy Rating (Eas)	190 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free