FQU7N10LTU

new-10%

Manufacturer part number:FQU7N10LTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 5.8A IPAK

Case Package:SOT-23

Datasheet:FQU7N10LTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.5W Ta 25W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.8A Tc
Gate Charge (Qg) (Max) @ Vgs	6nC @ 5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V