SQD45N05-20L-GE3

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Manufacturer part number:SQD45N05-20L-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 50V 50A TO252

Case Package:SOT-23

Datasheet:SQD45N05-20L-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	49 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.5W Ta 75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	50V
RoHS Status	ROHS3 Compliant