SQD50N10-8M9L_GE3

new-10%

Manufacturer part number:SQD50N10-8M9L_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CHAN 100V TO252

Case Package:SOT-23

Datasheet:SQD50N10-8M9L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	136W Tc
Element Configuration	Single
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	2V
Height	2.38mm
Length	6.22mm
Width	6.73mm
RoHS Status	ROHS3 Compliant