SQJ469EP-T1_GE3

new-10%

Manufacturer part number:SQJ469EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SQJ469EP-T1-GE3 MOSFET Transistor, P Channel, -32 A, -80 V, 0.021 ohm, -10 V, -2 V

Case Package:SOT-23

Datasheet:SQJ469EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Supplier Device Package	PowerPAK® SO-8
Weight	506.605978mg
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Power Dissipation	100W
Turn On Delay Time	16 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 40V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	-32A
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-80V
Input Capacitance	5.1nF
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	45mOhm
Rds On Max	25 mΩ
Nominal Vgs	-2 V
Height	1.267mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant