SQJ960EP-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website
SOT-23
SQJ960EP-T1_GE3 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Number of Pins
8
Supplier Device Package
PowerPAK® SO-8 Dual
Weight
506.605978mg
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
Automotive, AEC-Q101, TrenchFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
40mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
34W
Number of Elements
1
Number of Channels
2
Element Configuration
Dual
Power Dissipation
34W
Turn On Delay Time
6 ns
Power - Max
34W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
735pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
8ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
8A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
735pF
FET Feature
Logic Level Gate
Drain to Source Resistance
30mOhm
Rds On Max
36 mΩ
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$1.00965
$3.02895
6,000
$0.97461
$5.84766
SQJ960EP-T1_GE3 Product Details
SQJ960EP-T1_GE3 Description
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.