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SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

Vishay Siliconix

SQJ960EP-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

SOT-23

SQJ960EP-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Number of Pins 8
Supplier Device Package PowerPAK® SO-8 Dual
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 40mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 34W
Number of Elements 1
Number of Channels 2
Element Configuration Dual
Power Dissipation 34W
Turn On Delay Time 6 ns
Power - Max 34W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 735pF
FET Feature Logic Level Gate
Drain to Source Resistance 30mOhm
Rds On Max 36 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $1.00965 $3.02895
6,000 $0.97461 $5.84766
SQJ960EP-T1_GE3 Product Details

SQJ960EP-T1_GE3                                    Description

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.


 SQJ960EP-T1_GE3                                    FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• 100 % Rg and UIS tested

• Material categorization:

for definitions of compliance

SQJ960EP-T1_GE3                                    Applications

 DC-DC Converters

 Power Management Functions

 Relay And Solenoid Driving

 Motor Control


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