SQM100N04-2M7_GE3

new-10%

Manufacturer part number:SQM100N04-2M7_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 100A TO-263

Case Package:SOT-23

Datasheet:SQM100N04-2M7_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	157W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0027Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	245 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free