STP4NK80ZFP

new-10%

Manufacturer part number:STP4NK80ZFP

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 3.5 Ω @ 1.5A, 10V ±30V 575pF @ 25V 22.5nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STP4NK80ZFP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.5Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP4N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	ISOLATED
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	22.5nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	12A
Avalanche Energy Rating (Eas)	190 mJ
Height	9.3mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free