SQM110P04-04L-GE3

new-10%

Manufacturer part number:SQM110P04-04L-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 40V 120A TO263

Case Package:SOT-23

Datasheet:SQM110P04-04L-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Turn On Delay Time	17 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13980pF @ 20V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	112 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant