SIHFS9N60A-GE3

new-10%

Manufacturer part number:SIHFS9N60A-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 9.2A TO263

Case Package:SOT-23

Datasheet:SIHFS9N60A-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	170W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.2A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	9.2A
Drain-source On Resistance-Max	0.75Ohm
Pulsed Drain Current-Max (IDM)	37A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	Non-RoHS Compliant