SUD40N02-08-E3

new-10%

Manufacturer part number:SUD40N02-08-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 40A TO252

Case Package:SOT-23

Datasheet:SUD40N02-08-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	8.3W Ta 71W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	71W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.5m Ω @ 20A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	2660pF @ 20V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 4.5V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.0085Ohm
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	600 mV
Height	2.3876mm
Length	6.7056mm
Width	6.223mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant