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SUD50N03-12P-GE3

SUD50N03-12P-GE3

SUD50N03-12P-GE3

Vishay Siliconix

MOSFET 30V [email protected] 17.5A N-CH

SOT-23

SUD50N03-12P-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-252
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16.8A Ta
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 17.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.6nF
Drain to Source Resistance 12mOhm
Rds On Max 17 mΩ
RoHS Status ROHS3 Compliant

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