SI5858DU-T1-E3

new-10%

Manufacturer part number:SI5858DU-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 6A PPAK CHIPFET

Case Package:SOT-23

Datasheet:SI5858DU-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Supplier Device Package	PowerPAK® ChipFet Dual
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	LITTLE FOOT®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	2.3W Ta 8.3W Tc
Turn On Delay Time	20 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	65ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance	520pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	39mOhm
Rds On Max	39 mΩ
Height	750μm
Length	3mm
Width	1.9mm
RoHS Status	ROHS3 Compliant