SI4493DY-T1-GE3

new-10%

Manufacturer part number:SI4493DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 10A 8SOIC

Case Package:SOT-23

Datasheet:SI4493DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	7.75mOhm
Terminal Finish	PURE MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	110 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.75m Ω @ 14A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	110nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	140 ns
Turn-Off Delay Time	220 ns
Continuous Drain Current (ID)	10A
JEDEC-95 Code	MS-012AA
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free