ZVN4525E6TC

new-10%

Manufacturer part number:ZVN4525E6TC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 250V 0.23A SOT23-6

Case Package:SOT-23

Datasheet:ZVN4525E6TC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Weight	14.996898mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	230mA
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	1.25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	72pF @ 25V
Current - Continuous Drain (Id) @ 25°C	230mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.65nC @ 10V
Rise Time	1.7ns
Drive Voltage (Max Rds On,Min Rds On)	2.4V 10V
Vgs (Max)	±40V
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	11.4 ns
Continuous Drain Current (ID)	230mA
Gate to Source Voltage (Vgs)	40V
Drain Current-Max (Abs) (ID)	0.23A
Drain to Source Breakdown Voltage	250V
Height	1.3mm
Length	3.1mm
Width	1.8mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free