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APT20N60BC3G

APT20N60BC3G

APT20N60BC3G

Microsemi Corporation

MOSFET N-CH 600V 20.7A TO-247

SOT-23

APT20N60BC3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series CoolMOS™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE ENERGY RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 20.7A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 20.7A
JEDEC-95 Code TO-247AD
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 62A
Avalanche Energy Rating (Eas) 690 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

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