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SUD50N10-34P-T4-E3

SUD50N10-34P-T4-E3

SUD50N10-34P-T4-E3

Vishay Siliconix

MOSFET N-CH 100V 5.9A TO252

SOT-23

SUD50N10-34P-T4-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.5W Ta 56W Tc
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.9A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
RoHS Status ROHS3 Compliant

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