SUD50P04-23-E3

new-10%

Manufacturer part number:SUD50P04-23-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 40V 8.2A TO252

Case Package:SOT-23

Datasheet:SUD50P04-23-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.1W Ta 45.4W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	23m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1880pF @ 20V
Current - Continuous Drain (Id) @ 25°C	8.2A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	8.2A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	20A
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	20 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant