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SUD50P08-26-E3

SUD50P08-26-E3

SUD50P08-26-E3

Vishay Siliconix

MOSFET P-CH 80V 50A TO252

SOT-23

SUD50P08-26-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 8.3W Ta 136W Tc
Element Configuration Single
Power Dissipation 8.3W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 12.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5160pF @ 40V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 12.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
Input Capacitance 5.16nF
Drain to Source Resistance 26mOhm
Rds On Max 26 mΩ
RoHS Status ROHS3 Compliant

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