SUD50P10-43L-GE3

new-10%

Manufacturer part number:SUD50P10-43L-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 100V 37.1A TO252

Case Package:SOT-23

Datasheet:SUD50P10-43L-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1995
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	8.3W Ta 136W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.9W
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	43m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	37.1A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	37.1A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	40A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free