SUM60030E-GE3

new-10%

Manufacturer part number:SUM60030E-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 80V 120A D2PAK

Case Package:SOT-23

Datasheet:SUM60030E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7910pF @ 40V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	141nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	7.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	120A
Drain-source On Resistance-Max	0.0032Ohm
Pulsed Drain Current-Max (IDM)	250A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	245 mJ
RoHS Status	ROHS3 Compliant