IXFB82N60Q3

new-10%

Manufacturer part number:IXFB82N60Q3

Manufacturer:IXYS

Description:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A

Case Package:SOT-23

Datasheet:IXFB82N60Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	264
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1560W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.56kW
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 41A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	82A Tc
Gate Charge (Qg) (Max) @ Vgs	275nC @ 10V
Rise Time	300ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	82A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	4000 mJ
Height	26.59mm
Length	20.29mm
Width	5.31mm
RoHS Status	ROHS3 Compliant