SI7113DN-T1-GE3

new-10%

Manufacturer part number:SI7113DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 100V 13.2A 1212-8

Case Package:SOT-23

Datasheet:SI7113DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	134mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.7W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	134m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1480pF @ 50V
Current - Continuous Drain (Id) @ 25°C	13.2A Tc
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Rise Time	110ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	3.5A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	20A
Height	1.04mm
Length	3.3mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant