SUP36N20-54P-E3

new-10%

Manufacturer part number:SUP36N20-54P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 36A TO220AB

Case Package:SOT-23

Datasheet:SUP36N20-54P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	3.12W Ta 166W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.12W
Turn On Delay Time	16 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	53m Ω @ 20A, 15V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	127nC @ 15V
Rise Time	170ns
Drive Voltage (Max Rds On,Min Rds On)	10V 15V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	36A
Threshold Voltage	4.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	80A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	20 mJ
Nominal Vgs	4.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant