SUP60N10-18P-E3

new-10%

Manufacturer part number:SUP60N10-18P-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 60A TO220AB

Case Package:SOT-23

Datasheet:SUP60N10-18P-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	18.3mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.75W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.75W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	4.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Nominal Vgs	4.5 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free