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BUJ303CD,118

  • BUJ303CD,118
  • BUJ303CD,118

BUJ303CD,118

BUJ303CD,118

WeEn Semiconductors

BUJ303CD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ303CD,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 28 @ 10mA 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 5A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
7,500 $0.26224 $1.83568
BUJ303CD,118 Product Details

BUJ303CD,118 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 28 @ 10mA 3V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Device displays Collector Emitter Breakdown (400V maximal voltage).

BUJ303CD,118 Features


the DC current gain for this device is 28 @ 10mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3A

BUJ303CD,118 Applications


There are a lot of WeEn Semiconductors BUJ303CD,118 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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