BUJD203AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJD203AD,118 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Base Part Number
BUJD203A
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
11 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
425V
Current - Collector (Ic) (Max)
4A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.989982
$1.989982
10
$1.877341
$18.77341
100
$1.771077
$177.1077
500
$1.670828
$835.414
1000
$1.576252
$1576.252
BUJD203AD,118 Product Details
BUJD203AD,118 Overview
This device has a DC current gain of 11 @ 2A 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 425V maximal voltage - Collector Emitter Breakdown is present in the device.
BUJD203AD,118 Features
the DC current gain for this device is 11 @ 2A 5V the vce saturation(Max) is 1V @ 600mA, 3A
BUJD203AD,118 Applications
There are a lot of WeEn Semiconductors BUJD203AD,118 applications of single BJT transistors.