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BD243B-S

BD243B-S

BD243B-S

Bourns Inc.

BD243B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD243B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation65W
Base Part Number BD243
Number of Elements 1
Element ConfigurationSingle
Power Dissipation65W
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 6A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2911 items

BD243B-S Product Details

BD243B-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1A, 6A.Maintaining the continuous collector voltage at 6A is essential for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.A maximum collector current of 6A volts is possible.

BD243B-S Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V

BD243B-S Applications


There are a lot of Bourns Inc. BD243B-S applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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