BD244B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD244B-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
65W
Base Part Number
BD244
Element Configuration
Single
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD244B-S Product Details
BD244B-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Collector current can be as low as 6A volts at its maximum.
BD244B-S Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the emitter base voltage is kept at 5V
BD244B-S Applications
There are a lot of Bourns Inc. BD244B-S applications of single BJT transistors.