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BD244B-S

BD244B-S

BD244B-S

Bourns Inc.

BD244B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD244B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation65W
Base Part Number BD244
Element ConfigurationSingle
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage80V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3320 items

BD244B-S Product Details

BD244B-S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Collector current can be as low as 6A volts at its maximum.

BD244B-S Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V

BD244B-S Applications


There are a lot of Bourns Inc. BD244B-S applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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