BDW53D-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BDW53D-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
2W
Base Part Number
BDW53
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
4V @ 40mA, 4A
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BDW53D-S Product Details
BDW53D-S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 40mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.The maximum collector current is 4A volts.
BDW53D-S Features
the DC current gain for this device is 750 @ 1.5A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 4V @ 40mA, 4A the emitter base voltage is kept at 5V
BDW53D-S Applications
There are a lot of Bourns Inc. BDW53D-S applications of single BJT transistors.