BDW53D-S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 40mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.The maximum collector current is 4A volts.
BDW53D-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 40mA, 4A
the emitter base voltage is kept at 5V
BDW53D-S Applications
There are a lot of Bourns Inc. BDW53D-S applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
