BD245A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD245A-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
80W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD245
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
4V @ 2.5A, 10A
Collector Emitter Breakdown Voltage
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
10A
RoHS Status
ROHS3 Compliant
BD245A-S Product Details
BD245A-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3A 4V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 2.5A, 10A.For high efficiency, the continuous collector voltage must be kept at 10A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 10A volts.
BD245A-S Features
the DC current gain for this device is 20 @ 3A 4V the vce saturation(Max) is 4V @ 2.5A, 10A the emitter base voltage is kept at 5V
BD245A-S Applications
There are a lot of Bourns Inc. BD245A-S applications of single BJT transistors.