BD539C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 3A 4V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
BD539C-S Features
the DC current gain for this device is 12 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 5A
the emitter base voltage is kept at 5V
BD539C-S Applications
There are a lot of Bourns Inc. BD539C-S applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
