KSC2316YTA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 120MHz is present in the part.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

KSC2316YTA Features

the DC current gain for this device is 120 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 120MHz

KSC2316YTA Applications

There are a lot of ON Semiconductor KSC2316YTA applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter