BD746-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD746-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Power Dissipation
3.5W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD746
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
115W
Case Connection
COLLECTOR
Power - Max
3.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
20A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A 4V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 5A, 20A
Collector Emitter Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
BD746-S Product Details
BD746-S Overview
DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 5A, 20A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Maximum collector currents can be below 20A volts.
BD746-S Features
the DC current gain for this device is 20 @ 5A 4V the vce saturation(Max) is 3V @ 5A, 20A the emitter base voltage is kept at 5V
BD746-S Applications
There are a lot of Bourns Inc. BD746-S applications of single BJT transistors.