NST489AMT1 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 500mA 5V.A collector emitter saturation voltage of 100mV allows maximum design flexibility.A VCE saturation (Max) of 200mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).In the part, the transition frequency is 300MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

NST489AMT1 Features

the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 300MHz

NST489AMT1 Applications

There are a lot of ON Semiconductor NST489AMT1 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter