BC307BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC307BG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e1
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
280MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC307
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
280MHz
Collector Emitter Saturation Voltage
-300mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
200
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC307BG Product Details
BC307BG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 280MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC307BG Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 250mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is -100mA a transition frequency of 280MHz
BC307BG Applications
There are a lot of ON Semiconductor BC307BG applications of single BJT transistors.