BDV64B-S Overview
DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 2V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This product comes in a SOT-93 device package from the supplier.The device exhibits a collector-emitter breakdown at 100V.Collector current can be as low as 12A volts at its maximum.
BDV64B-S Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93
BDV64B-S Applications
There are a lot of Bourns Inc. BDV64B-S applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
