BDV65C-S Overview

This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in SOT-93 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.When collector current reaches its maximum, it can reach 12A volts.

BDV65C-S Features

the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of SOT-93

BDV65C-S Applications

There are a lot of Bourns Inc. BDV65C-S applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting