BDW24C-S Overview

In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Product comes in TO-220 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 6A volts.

BDW24C-S Features

the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 60mA, 6A
the emitter base voltage is kept at 5V
the supplier device package of TO-220

BDW24C-S Applications

There are a lot of Bourns Inc. BDW24C-S applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface